| Model |
AC3M0160120D |
|---|---|
| Description |
SiC MOSFET N-CH 1200V 18A TO-247-3 |
| Technology |
Silicon Carbide |
| FET Type |
N-Channel |
| Package |
TO-247-3 |
| Drain to Source Voltage |
1200V |
| Continuous Drain Current (ID) |
18A |
| Gate Drive Voltage (Vgs) |
15V |
| Vgs (Max) |
-8V, +19V |
| Rds(on) |
160mΩ |
| Vgs(th) |
2.8V |
| Gate Charge (Qg) |
36 nC |
| Input Capacitance (Ciss) |
591 pF |
| Max Power Dissipation |
98W |
| Operating Temperature (°C) |
-55 ~ 150 |
| Mounting Type |
Through Hole |
Specifications & Application Scenarios
Specifications: The AC3M0160120D is a rugged 1200V, 18A SiC MOSFET with a 160mΩ on-resistance. It operates with a 15V/-8V gate drive and has a Vgs(th) of 2.8V. The device has a low total gate charge of 36nC. Rated for 98W, it operates from -55°C to 150°C.
Application Scenarios: This MOSFET is ideal for harsh environment applications. It is suitable for downhole drilling equipment power converters, aviation/aerospace power systems, and as a solid-state relay replacement for high-voltage DC switching.
Application Scenarios: This MOSFET is ideal for harsh environment applications. It is suitable for downhole drilling equipment power converters, aviation/aerospace power systems, and as a solid-state relay replacement for high-voltage DC switching.
Related products
ADDRESS：
17F, North Industrial Building, No. 3003 Shennan Road, Futian District, Shenzhen, China
TEL：
+86-755-83-666-556
+86-755-83-666-557
+86-755-83-666-558
E-mail：
apsemi@a-semi.com
sales@a-semi.com
design@a-semi.com
©2026 APSEMI CO.,LTD