| الطراز |
AC3M0350120D |
|---|---|
| الوصف |
SiC MOSFET N-CH 1200V 8A TO-247-3 |
| Technology |
Silicon Carbide |
| FET Type |
N-Channel |
| الحزمة |
تو-247-3 |
| Drain to Source Voltage |
1200V |
| Continuous Drain Current (ID) |
8A |
| Gate Drive Voltage (Vgs) |
15V |
| Vgs (Max) |
-8V, +19V |
| Rds(on) |
350mΩ |
| Vgs(th) |
2.5V |
| Gate Charge (Qg) |
19 nC |
| سعة الإدخال (Ciss) |
297 nC |
| Max Power Dissipation |
52W |
| Operating Temperature (°C) |
-55 ~ 150 |
| نوع التركيب |
Through Hole |
Specifications & Application Scenarios
Specifications: The AC3M0350120D is a 1200V, 8A SiC MOSFET with a 350mΩ on-resistance. It is designed for 15V/-8V gate operation and has a Vgs(th) of 2.5V. The device has a moderate gate charge and is rated for 52W. It operates from -55°C to 150°C.
Application Scenarios: This MOSFET is suited for specialized, low-power applications requiring 1200V blocking. It can be used in PMT/APD bias supplies, electrostatic chuck power controls, and as a series isolation switch in high-voltage probe circuits.
Application Scenarios: This MOSFET is suited for specialized, low-power applications requiring 1200V blocking. It can be used in PMT/APD bias supplies, electrostatic chuck power controls, and as a series isolation switch in high-voltage probe circuits.
المنتجات ذات الصلة
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