| الطراز | AC3M0280090D |
|---|---|
| الوصف | SiC MOSFET N-CH 900V 11A TO-247-3 |
| Technology | Silicon Carbide |
| FET Type | N-Channel |
| الحزمة | تو-247-3 |
| Drain to Source Voltage | 900V |
| Continuous Drain Current (ID) | 11A |
| Gate Drive Voltage (Vgs) | 15V |
| Vgs (Max) | -8V, +19V |
| Rds(on) | 320mΩ |
| Vgs(th) | 2.7V |
| Gate Charge (Qg) | 7.7 nC |
| سعة الإدخال (Ciss) | 153 pF |
| Max Power Dissipation | 47W |
| Operating Temperature (°C) | -55 ~ 150 |
| نوع التركيب | Through Hole |
Specifications & Application Scenarios
Specifications: The AC3M0280090D is a 900V, 11A SiC MOSFET with a 320mΩ on-resistance. It operates with a 15V/-8V gate drive and has a Vgs(th) of 2.7V. Its most notable feature is an ultra-low total gate charge of 7.7nC. Rated for 47W, it operates from -55°C to 150°C.
Application Scenarios: This device is tailored for applications where switching speed is paramount. It is ideal for RF envelope tracking in 5G base stations, switch in high-efficiency Class-E amplifiers, and high-voltage, high-frequency signal generation circuits.
Application Scenarios: This device is tailored for applications where switching speed is paramount. It is ideal for RF envelope tracking in 5G base stations, switch in high-efficiency Class-E amplifiers, and high-voltage, high-frequency signal generation circuits.
المنتجات ذات الصلة
العنوان:：
17F، المبنى الصناعي الشمالي، رقم 3003 طريق شينان، منطقة فوتيان، شينزين، الصين
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