HOME / PRODUKT / FOTO DMOSRELAY / APV278WE
APSEMI PN

APV278WE

Schaltung

1 Form A(SPST-NO)

Beschreibung

SiC SSR RELAY SPST-NO 30mA 1800V, WDIP-4

Laststrom

30mA

Montageart

Through Hole

Durchgangswiderstand (Max)

200Ω

Ausgangstyp

AC, DC

Paket

WDIP-4

Verpackung

Tube

Serie

Photo-MOS-Solid-State-Relais

Ausschalten

50us

Einschalten

80us

Spannungseingang

1.33 ~ 1.5VDC

Spannung - Last

0V~1800V

Specifications & Application Scenarios

Specifications: The APV278WE is a high-voltage, Silicon Carbide (SiC) based PhotoMOS solid-state relay in a WDIP-4 (Wide DIP) package. It is a 1 Form A (SPST-NO) device designed for ultra-high voltage, low-current switching, rated for 30mA at 1800V AC/DC. It features a 200惟 on-state resistance, provides 5000Vrms of robust isolation, and offers fast 80渭s/50渭s switching. Operating from -40掳C to 85掳C, it is controlled by a 1.33-1.5VDC input. Application Scenarios: This SiC relay is engineered for extreme high-voltage isolation applications requiring reliability and performance. It is ideal for medical imaging systems (CT/PET scanners), high-voltage power supplies, industrial test and measurement equipment for dielectric strength testing, X-ray generator control, and scientific instrumentation. The WDIP-4 package offers a wider pin spacing, enhancing creepage and clearance for improved high-voltage safety in through-hole designs.

Ähnliche Produkte

ADRESSE:

17F, North Industrial Building, Nr. 3003 Shennan Road, Futian District, Shenzhen, China

TEL:

+86-755-83-666-556
+86-755-83-666-557
+86-755-83-666-558

E-Mail:

apsemi@a-semi.com
sales@a-semi.com
design@a-semi.com

©2026 APSEMI CO.,LTD