Model

AC3M0025065D

Beschreibung

SiC MOSFET N-CH 650V 98A TO-247-3

Serie

Silicon Carbide

FET Type

N-Channel

DrainVoltage(Vdss)

650V

Current

98A

Drive Voltage

15V

Vgs (Max)

+19V, -8V

Rds On

25mΩ

Vgs(th)

2.3V

Gate Charge (Qg)

106 nC

Input Capacitance (Ciss)

2622 pF

Power Dissipation

330W

Betriebstemperatur (℃)

-40°C ~ 175°C

Montageart

Through Hole

Paket

TO-247-3

Specifications & Application Scenarios

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