Model

AC3M0032120D

Beschreibung

SiC MOSFET N-CH 1200V 64A TO-247-3

Serie

Silicon Carbide

FET Type

N-Channel

DrainVoltage(Vdss)

1200V

Current

64A

Drive Voltage

15V

Vgs (Max)

+15V, -4V

Rds On

32mΩ

Vgs(th)

2.5V

Gate Charge (Qg)

113 nC

Input Capacitance (Ciss)

3180 pF

Power Dissipation

288W

Betriebstemperatur (℃)

-40°C ~ 175°C

Montageart

Through Hole

Paket

TO-247-3

Specifications & Application Scenarios

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