| Modelo |
AC2M0160120D |
|---|---|
| Descripción |
SiC MOSFET N-CH 1200V 18A TO-247-3 |
| Serie |
Silicon Carbide |
| FET Type |
N-Channel |
| DrainVoltage(Vdss) |
1200V |
| Current |
18A |
| Drive Voltage |
20V |
| Vgs (Max) |
+25V, -10V |
| Rds On |
160mΩ |
| Vgs(th) |
2.9V |
| Gate Charge (Qg) |
38 nC |
| Input Capacitance (Ciss) |
550 pF |
| Power Dissipation |
124W |
| Operating Temperature (℃) |
-55°C ~ 150°C |
| Tipo de montaje |
Agujero pasante |
| Paquete |
TO-247-3 |
Specifications & Application Scenarios
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