| Model | |
|---|---|
| Description |
SiC MOS (Silicon Carbide)AC2M0160120D 1200V 19A |
| FET Type |
N-Channel |
| DrainVoltage(Vdss) |
1200V |
| Current |
19A |
| Drive Voltage |
20V |
| Vgs (Max) |
+25V, -10V |
| Rds On |
160mΩ |
| Vgs(th) |
2.5V |
| Gate Charge (Qg) |
32.6 nC |
| Input Capacitance (Ciss) |
527 pF |
| Power Dissipation |
125W |
| Operating Temperature (℃) | |
| Mounting Type |
Through Hole |
| Package |
TO-247-3 |
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