| الطراز | AC2M0160120120D |
|---|---|
| الوصف | SiC MOSFET N-CH 1200V 18A TO-247-3 |
| Technology | Silicon Carbide |
| FET Type | N-Channel |
| الحزمة | تو-247-3 |
| Drain to Source Voltage | 1200V |
| Continuous Drain Current (ID) | 18A |
| Gate Drive Voltage (Vgs) | 20V |
| Vgs (Max) | +25V, -10V |
| Rds(on) | 160 مترًا مكعبًا |
| Vgs(th) | 2.9V |
| Gate Charge (Qg) | 38 nC |
| سعة الإدخال (Ciss) | 550 pF |
| Max Power Dissipation | 124W |
| Operating Temperature (°C) | -55 ~ 150 |
| نوع التركيب | Through Hole |
Specifications & Application Scenarios
Specifications: The AC2M0160120D is a 1200V, 18A SiC MOSFET. It provides an on-resistance of 160mΩ. The device operates with a 20V gate signal, within safe limits of +25V and -10V, and has a Vgs(th) of 2.9V. Its low gate charge (38nC) and input capacitance (550pF) contribute to high switching efficiency. Rated for 124W, it operates from -55°C to 150°C.
Application Scenarios: Ideal for applications requiring 1200V robustness at lower current levels. It is perfect for Power over Ethernet (PoE) injectors, pulse generators in medical/scientific equipment, and as a solid-state replacement for mechanical contactors in high-voltage switching.
Application Scenarios: Ideal for applications requiring 1200V robustness at lower current levels. It is perfect for Power over Ethernet (PoE) injectors, pulse generators in medical/scientific equipment, and as a solid-state replacement for mechanical contactors in high-voltage switching.
المنتجات ذات الصلة
العنوان:：
17F، المبنى الصناعي الشمالي، رقم 3003 طريق شينان، منطقة فوتيان، شينزين، الصين
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