| Model | AC2M0160120D |
|---|---|
| Description | SiC MOSFET N-CH 1200V 18A TO-247-3 |
| Technology | Silicon Carbide |
| FET Type | N-Channel |
| Gói | TO-247-3 |
| Drain to Source Voltage | 1200V |
| Continuous Drain Current (ID) | 18A |
| Gate Drive Voltage (Vgs) | 20V |
| Vgs (Max) | +25V, -10V |
| Rds(on) | 160mΩ |
| Vgs(th) | 2.9V |
| Gate Charge (Qg) | 38 nC |
| Input Capacitance (Ciss) | 550 pF |
| Max Power Dissipation | 124W |
| Operating Temperature (°C) | -55 ~ 150 |
| Mounting Type | Through Hole |
Specifications & Application Scenarios
Specifications: The AC2M0160120D is a 1200V, 18A SiC MOSFET. It provides an on-resistance of 160mΩ. The device operates with a 20V gate signal, within safe limits of +25V and -10V, and has a Vgs(th) of 2.9V. Its low gate charge (38nC) and input capacitance (550pF) contribute to high switching efficiency. Rated for 124W, it operates from -55°C to 150°C.
Application Scenarios: Ideal for applications requiring 1200V robustness at lower current levels. It is perfect for Power over Ethernet (PoE) injectors, pulse generators in medical/scientific equipment, and as a solid-state replacement for mechanical contactors in high-voltage switching.
Application Scenarios: Ideal for applications requiring 1200V robustness at lower current levels. It is perfect for Power over Ethernet (PoE) injectors, pulse generators in medical/scientific equipment, and as a solid-state replacement for mechanical contactors in high-voltage switching.
Related products
ĐỊA CHỈ：
Tầng 17, Tòa nhà Công nghiệp Bắc, Số 3003 Đường Shennan, Quận Futian, Thâm Quyến, Trung Quốc
Điện thoại：
+86-755-83-666-556
+86-755-83-666-557
+86-755-83-666-558
Email：
apsemi@a-semi.com
sales@a-semi.com
design@a-semi.com
©2026 APSEMI Công ty TNHH