| Modelo |
AC2M0160120D |
|---|---|
| Descripción |
SiC MOSFET N-CH 1200V 18A TO-247-3 |
| Technology |
Silicon Carbide |
| FET Type |
N-Channel |
| Paquete |
TO-247-3 |
| Drain to Source Voltage |
1200V |
| Continuous Drain Current (ID) |
18A |
| Gate Drive Voltage (Vgs) |
20V |
| Vgs (Max) |
+25V, -10V |
| Rds(on) |
160mΩ |
| Vgs(th) |
2.9V |
| Gate Charge (Qg) |
38 nC |
| Input Capacitance (Ciss) |
550 pF |
| Max Power Dissipation |
124W |
| Operating Temperature (°C) |
-55 ~ 150 |
| Tipo de montaje |
Agujero pasante |
Specifications & Application Scenarios
Specifications: The AC2M0160120D is a 1200V, 18A SiC MOSFET. It provides an on-resistance of 160mΩ. The device operates with a 20V gate signal, within safe limits of +25V and -10V, and has a Vgs(th) of 2.9V. Its low gate charge (38nC) and input capacitance (550pF) contribute to high switching efficiency. Rated for 124W, it operates from -55°C to 150°C.
Application Scenarios: Ideal for applications requiring 1200V robustness at lower current levels. It is perfect for Power over Ethernet (PoE) injectors, pulse generators in medical/scientific equipment, and as a solid-state replacement for mechanical contactors in high-voltage switching.
Application Scenarios: Ideal for applications requiring 1200V robustness at lower current levels. It is perfect for Power over Ethernet (PoE) injectors, pulse generators in medical/scientific equipment, and as a solid-state replacement for mechanical contactors in high-voltage switching.
Productos relacionados
DIRECCIÓN：
17F, North Industrial Building, No. 3003 Shennan Road, Futian District, Shenzhen, China
TEL：
+86-755-83-666-556
+86-755-83-666-557
+86-755-83-666-558
Correo electrónico：
apsemi@a-semi.com
sales@a-semi.com
design@a-semi.com
©2026 APSEMI CO.,LTD