APSEMI PN

APV278WE

Circuit

1 Forme A (SPST-NO)

Description

SiC SSR RELAY SPST-NO 30mA 1800V, WDIP-4

Courant de charge

30mA

Type de montage

Trou de passage

Résistance à l'état passant (Max)

200Ω

Type de sortie

AC, DC

Paquet

WDIP-4

Emballage

Tube

Série

Relais à semi-conducteurs Photo MOS

Mise hors tension

50us

Mise en marche

80us

Entrée tension

1.33 ~ 1.5VDC

Tension - Charge

0V~1800V

Specifications & Application Scenarios

Specifications: The APV278WE is a high-voltage, Silicon Carbide (SiC) based PhotoMOS solid-state relay in a WDIP-4 (Wide DIP) package. It is a 1 Form A (SPST-NO) device designed for ultra-high voltage, low-current switching, rated for 30mA at 1800V AC/DC. It features a 200惟 on-state resistance, provides 5000Vrms of robust isolation, and offers fast 80渭s/50渭s switching. Operating from -40掳C to 85掳C, it is controlled by a 1.33-1.5VDC input. Application Scenarios: This SiC relay is engineered for extreme high-voltage isolation applications requiring reliability and performance. It is ideal for medical imaging systems (CT/PET scanners), high-voltage power supplies, industrial test and measurement equipment for dielectric strength testing, X-ray generator control, and scientific instrumentation. The WDIP-4 package offers a wider pin spacing, enhancing creepage and clearance for improved high-voltage safety in through-hole designs.

Produits apparentés

ADDRESS:

17F, North Industrial Building, No. 3003 Shennan Road, Futian District, Shenzhen, Chine

TEL:

+86-755-83-666-556
+86-755-83-666-557
+86-755-83-666-558

E-mail:

apsemi@a-semi.com
sales@a-semi.com
design@a-semi.com

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