AC4D02120A
Specifications: The AC4D02120A is a 2A, 1200V SiC Schottky diode in TO-220-2. Key parameters: V_F=1.4V, P_TOT=60W, Q_C=11nC. It is an entry-point SiC diode for high-voltage, signal-level, or snubber applications.
Application Scenarios: For snubber circuits, high-voltage OR-ing, and low-power bias supplies in high-voltage systems. Also used in precision measurement equipment.
AC4D05120A
Specifications: The AC4D05120A is a 5A, 1200V SiC Schottky diode in TO-220-2. It has V_F=1.4V, P_TOT=100W, and Q_C=27nC. It offers high-voltage performance at an accessible 5A current point.
Application Scenarios: For lower-current, high-voltage needs. Used in auxiliary power supplies for solar inverters, high-voltage sensor interfaces, and laboratory equipment. Provides SiC benefits in a low-power segment.
AC4D08120A
Specifications: The AC4D08120A is an 8A, 1200V SiC Schottky diode in TO-220-2. It has V_F=1.5V, P_TOT=136.5W, and Q_C=37nC. It provides an efficient solution for 8A circuits requiring high voltage blocking.
Application Scenarios: For 8A-rated high-voltage applications. Used in solar panel optimizers, small energy storage systems, and high-voltage LED drivers. Enables efficient power conversion in tight spaces.
AC4D10120A
Specifications: The AC4D10120A is a 10A, 1200V SiC Schottky diode in TO-220-2. Specs: V_F=1.5V, P_TOT=166.5W, Q_C=52nC. A compact workhorse for 10A, 1200V applications.
Application Scenarios: Widely used in compact 1-2kW solar inverters, EV charging wall boxes, and industrial PSUs. A popular choice for upgrading efficiency in standard form factors.
AC4D10120D
Specifications: The AC4D10120D is a 1200V, 10A SiC Schottky diode in TO-247-3. It has V_F=1.4V, P_TOT=187W, and Q_C=27nC. It combines medium current with high voltage blocking capability.
Application Scenarios: For 800V bus systems with moderate current. Used in solar micro-inverters, EV auxiliary power modules, and mid-power 3-phase drives. The TO-247-3 package ensures good thermal dissipation.
AC4D10120H
Specifications: The AC4D10120H is a 1200V, 10A SiC Schottky diode in TO-247-2. Key specs: V_F=1.5V, P_TOT=153W, Q_C=52nC. It offers a balance of voltage, current, and package for 10A designs.
Application Scenarios: Versatile for various 10A applications. Used in EV onboard chargers, telecom power systems, and industrial control power supplies. A high-performance upgrade path.
AC4D12120A
Specifications: The AC4D12120A is a 12A, 1200V SiC Schottky diode in TO-220-2. It features a low V_F of 1.35V, P_TOT of 166.5W, and Q_C of 52nC. The low V_F is notable for reducing conduction losses.
Application Scenarios: For applications where conduction loss is critical. Ideal in high-duty-cycle circuits like certain PFC stages and DC/DC converters. Maximizes system efficiency.
AC4D15120A
Specifications: The AC4D15120A is a 1200V, 15A SiC Schottky diode in TO-220-2. It features V_F=1.6V, P_TOT=214W, and Q_C=77.5nC. It packs high-voltage performance into a cost-effective, compact package.
Application Scenarios: For cost-sensitive, compact 15A designs. Applied in consumer-grade solar inverters, power tools, and compact industrial drives. Improves system efficiency without significant space penalty.
AC4D15120D
Specifications: The AC4D15120D is a 1200V, 15A SiC Schottky diode in TO-247-3. Specs: V_F=1.5V, P_TOT=270W, Q_C=37nC. It delivers robust performance for 15A applications at high voltage.
Application Scenarios: Suitable for growing power levels. Applied in energy storage system (ESS) converters, mid-power solar inverters, and industrial welding equipment. Balances performance and cost.
AC4D15120H
Specifications: The AC4D15120H is a 1200V, 15A SiC Schottky diode in TO-247-2. It has V_F=1.5V, P_TOT=174.5W, and Q_C=77.5nC. A robust solution for 15A circuits at 1200V.
Application Scenarios: For mid-power high-voltage conversion. Ideal in battery storage converters, mid-range solar inverters, and industrial PSUs. Reliable and efficient.
AC4D20120A
Specifications: The AC4D20120A is a 1200V, 20A SiC Schottky diode in the compact TO-220-2 package. It offers V_F=1.5V, P_TOT=250W, and Q_C=99nC. It brings high-voltage performance to a smaller form factor.
Application Scenarios: For space-constrained high-voltage designs. Used in compact solar optimizers, drone charger circuits, and high-density power modules. Maximizes power density.
AC4D20120D
Specifications: The AC4D20120D is a 1200V, 20A SiC Schottky diode in TO-247-3. It features V_F=1.5V, P_TOT=352W, and Q_C=52nC. It is built for high-power, high-voltage switching.
Application Scenarios: For demanding 20A, 1200V circuits. Ideal in 3-phase PFC units, high-power telecom rectifiers, and motor drives for industrial machinery. Provides efficiency and reliability.