| Model | |
|---|---|
| Description |
SiC MOS (Silicon Carbide)AC3M0075120Ki 1200V 32A |
| FET Type |
N-Channel |
| DrainVoltage(Vdss) |
1200V |
| Current |
32A |
| Drive Voltage |
15V |
| Vgs (Max) |
+19V, -8V |
| Rds On |
75mΩ |
| Vgs(th) |
3.8V |
| Gate Charge (Qg) |
55 nC |
| Input Capacitance (Ciss) |
1480 pF |
| Power Dissipation |
145W |
| Operating Temperature (℃) | |
| Mounting Type |
Through Hole |
| Package |
Related products
АДРЕС：
17F, North Industrial Building, No. 3003 Shennan Road, Futian District, Shenzhen, China
TEL：
+86-755-83-666-556
+86-755-83-666-557
+86-755-83-666-558
Электронная почта：
apsemi@a-semi.com
sales@a-semi.com
design@a-semi.com
©2026 APSEMI CO., LTD