| Model |
AC3M0120090D |
|---|---|
| Description |
SiC MOSFET N-CH 900V 24A TO-247-3 |
| Technology |
Silicon Carbide |
| FET Type |
N-Channel |
| Gói |
TO-247-3 |
| Drain to Source Voltage |
900V |
| Continuous Drain Current (ID) |
24A |
| Gate Drive Voltage (Vgs) |
15V |
| Vgs (Max) |
+18V, -8V |
| Rds(on) |
120mΩ |
| Vgs(th) |
2.1V |
| Gate Charge (Qg) |
19 nC |
| Input Capacitance (Ciss) |
366 pF |
| Max Power Dissipation |
98W |
| Operating Temperature (°C) |
-55 ~ 150 |
| Mounting Type |
Through Hole |
Specifications & Application Scenarios
Specifications: The AC3M0120090D is a 900V, 24A SiC MOSFET with a 120mΩ on-resistance. It operates with a +18V/-8V gate drive and has a low Vgs(th) of 2.1V. Its standout characteristic is an exceptionally low total gate charge of 19nC. Rated for 98W, it operates from -55°C to 150°C.
Application Scenarios: This MOSFET is engineered for fast switching at high voltage. It is ideal for Marx generators and pulse-forming networks, switch in capacitive discharge ignition (CDI) systems, and high-voltage probe power supplies.
Application Scenarios: This MOSFET is engineered for fast switching at high voltage. It is ideal for Marx generators and pulse-forming networks, switch in capacitive discharge ignition (CDI) systems, and high-voltage probe power supplies.
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