Specifications: The AC2M0280120D is a 1200V, 11A SiC MOSFET with a 320mΩ on-resistance. Designed for 20V gate drive, it has Vgs(max) of +25V/-10V and a Vgs(th) of 3.1V. A key advantage is its extremely low gate charge of 17nC and minimal input capacitance of 210pF. The device has a 69W power rating and operates from -55°C to 150°C.

Application Scenarios: This MOSFET is optimized for high-frequency, high-voltage switching at lower power. It is well-suited for resonant gate drive circuits, for the main switch in high-voltage, low-power isolated DC-DC converters, and in precision pulsed power applications like laser drivers.