| Model | AC3M0065100K |
|---|---|
| 说明 | SiC MOSFET N-CH 1000V 33A TO-247-4 |
| Technology | Silicon Carbide |
| FET Type | N-Channel |
| 包装 | TO-247-4 |
| Drain to Source Voltage | 1000V |
| Continuous Drain Current (ID) | 33A |
| Gate Drive Voltage (Vgs) | 15V |
| Vgs (Max) | +19V, -8V |
| Rds(on) | 65mΩ |
| Vgs(th) | 2.1V |
| Gate Charge (Qg) | 33 nC |
| Input Capacitance (Ciss) | 710 pF |
| Max Power Dissipation | 115W |
| Operating Temperature (°C) | -55 ~ 150 |
| 安装类型 | Through Hole |
Specifications & Application Scenarios
Specifications: The AC3M0065100K is a 1000V, 33A SiC MOSFET in a TO-247-4 Kelvin source package. It features a 65mΩ on-resistance and a 33nC gate charge. Rated for 115W, it operates from -55°C to 150°C.
Application Scenarios: The combination of 1000V rating, Kelvin source, and fast switching makes this ideal for high-voltage, high-frequency auxiliary power supplies within EV traction inverters, switching elements in high-power laser diode drivers, and advanced scientific equipment power supplies.
Application Scenarios: The combination of 1000V rating, Kelvin source, and fast switching makes this ideal for high-voltage, high-frequency auxiliary power supplies within EV traction inverters, switching elements in high-power laser diode drivers, and advanced scientific equipment power supplies.
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