| Model | AC4D20120A |
|---|---|
| 说明 | SIC SCHOTTKY DIODES,1200V,20A,TO-220-2 |
| Technology | SiC (Silicon Carbide) Schottky |
| 包装 | TO-220-2 |
| Reverse Voltage (Vrrm) | 1200 V |
| Continuous Forward Current (IF) | 20 A |
| Forward Voltage (VF) | 1.5 V |
| Max Power Dissipation | 250 W |
| Capacitance Charge (QC) | 99 nC |
| Operating Temperature (°C) | -55°C ~ 175°C |
| 安装类型 | Through Hole |
| Packing | Tube |
Specifications & Application Scenarios
Specifications: The AC4D20120A is a 1200V, 20A SiC Schottky diode in the compact TO-220-2 package. It offers V_F=1.5V, P_TOT=250W, and Q_C=99nC. It brings high-voltage performance to a smaller form factor.
Application Scenarios: For space-constrained high-voltage designs. Used in compact solar optimizers, drone charger circuits, and high-density power modules. Maximizes power density.
Application Scenarios: For space-constrained high-voltage designs. Used in compact solar optimizers, drone charger circuits, and high-density power modules. Maximizes power density.
相关产品
地 址：
中国深圳市福田区深南大道3003号北方工业大厦17层
电话：
+86-755-83-666-556
+86-755-83-666-557
+86-755-83-666-558
电子邮件：
apsemi@a-semi.com
sales@a-semi.com
design@a-semi.com
©2026 APSEMI co.,ltd