Specifications: The APV212GE is a 500mA, 60V PhotoMOS SSR in a DIP-6 through-hole package. It features a 1Ω on-state resistance, high 5000Vrms isolation, and switching times of 200μs (on) and 350μs (off). It is designed for operation from -40°C to 85°C with a 1.2-1.4VDC input.

Application Scenarios: Provides a through-hole option for 500mA switching with enhanced 5000Vrms isolation. Common in legacy industrial equipment upgrades, laboratory instrument control boards, and power distribution units where the extra isolation margin and through-hole reliability are valued.