Specifications: The APV278AE is a Silicon Carbide (SiC) based ultra-high-voltage PhotoMOS SSR in a DIP-5 package. It is rated for 30mA at 1800V (AC/DC), features an 88Ω on-state resistance, and provides 5000Vrms isolation. Leveraging SiC technology, it offers fast switching (80μs/50μs) and high-temperature stability. It operates from -40°C to 85°C with 1.33-1.5VDC control.

Application Scenarios: Leverages SiC for superior performance at extreme voltages. Ideal for next-generation medical X-ray generators, particle accelerator subsystems, high-power RF amplifier bias switching, advanced dielectric test equipment, and any application demanding the ultimate in voltage blocking, speed, and reliability.