| الطراز |
AC3M0016116120D |
|---|---|
| الوصف |
SiC MOSFET N-CH 1200V 117A TO-247-3 |
| Technology |
Silicon Carbide |
| FET Type |
N-Channel |
| الحزمة |
تو-247-3 |
| Drain to Source Voltage |
1200V |
| Continuous Drain Current (ID) |
117A |
| Gate Drive Voltage (Vgs) |
15V |
| Vgs (Max) |
-8V, +19V |
| Rds(on) |
16mΩ |
| Vgs(th) |
2.5V |
| Gate Charge (Qg) |
207 nC |
| سعة الإدخال (Ciss) |
6085 ف فولت فلوري |
| Max Power Dissipation |
556W |
| Operating Temperature (°C) |
-40 ~ 175 |
| نوع التركيب |
Through Hole |
Specifications & Application Scenarios
Specifications: The AC3M0016120D represents high-end 1200V SiC technology, delivering 117A with a remarkably low on-resistance of 16mΩ. It operates with a 15V gate drive (-8V/+19V max) and has a Vgs(th) of 2.5V. The device's switching characteristics are defined by a 207nC total gate charge. It is built for extreme power handling (556W) and operates up to 175°C.
Application Scenarios: Engineered for the most demanding high-power conversion, this MOSFET is ideal for the main inverter bridge in multi-megawatt solar/energy storage inverters, power modules in EV fast-charging infrastructure, and primary switches in solid-state transformers (SST) for advanced grid applications.
Application Scenarios: Engineered for the most demanding high-power conversion, this MOSFET is ideal for the main inverter bridge in multi-megawatt solar/energy storage inverters, power modules in EV fast-charging infrastructure, and primary switches in solid-state transformers (SST) for advanced grid applications.
المنتجات ذات الصلة
العنوان:：
17F، المبنى الصناعي الشمالي، رقم 3003 طريق شينان، منطقة فوتيان، شينزين، الصين
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