| الطراز |
AC3M0016120K |
|---|---|
| الوصف |
SiC MOSFET N-CH 1200V 117A TO-247-4 |
| Technology |
Silicon Carbide |
| FET Type |
N-Channel |
| الحزمة |
تو-247-3 |
| Drain to Source Voltage |
1200V |
| Continuous Drain Current (ID) |
117A |
| Gate Drive Voltage (Vgs) |
15V |
| Vgs (Max) |
-8V, +19V |
| Rds(on) |
16mΩ |
| Vgs(th) |
2.9V |
| Gate Charge (Qg) |
216 nC |
| سعة الإدخال (Ciss) |
6085 ف فولت فلوري |
| Max Power Dissipation |
555W |
| Operating Temperature (°C) |
-40 ~ 175 |
| نوع التركيب |
Through Hole |
Specifications & Application Scenarios
Specifications: The AC3M0016120K is a variant of the flagship 1200V/117A SiC MOSFET, featuring the same 16mΩ on-resistance. The listed gate charge is 216nC with a Vgs(th) of 2.9V, and it is rated for 555W. If incorporating a Kelvin source connection, it offers benefits of reduced switching losses and improved gate drive integrity.
Application Scenarios: Targeting applications that require both the highest current handling at 1200V and clean switching performance. It would be suited for the output stage of high-power industrial RF generators, switches in multi-level converters, and advanced motor drives for aerospace/defense.
Application Scenarios: Targeting applications that require both the highest current handling at 1200V and clean switching performance. It would be suited for the output stage of high-power industrial RF generators, switches in multi-level converters, and advanced motor drives for aerospace/defense.
المنتجات ذات الصلة
العنوان:：
17F، المبنى الصناعي الشمالي، رقم 3003 طريق شينان، منطقة فوتيان، شينزين، الصين
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