| الطراز | AC3M0021120D |
|---|---|
| الوصف | SiC MOSFET N-CH 1200V 82A TO-247-3 |
| Technology | Silicon Carbide |
| FET Type | N-Channel |
| الحزمة | تو-247-3 |
| Drain to Source Voltage | 1200V |
| Continuous Drain Current (ID) | 82A |
| Gate Drive Voltage (Vgs) | 15V |
| Vgs (Max) | -8V, +19V |
| Rds(on) | 21mΩ |
| Vgs(th) | 2.5V |
| Gate Charge (Qg) | 158 nC |
| سعة الإدخال (Ciss) | 4620 pF |
| Max Power Dissipation | 472W |
| Operating Temperature (°C) | -40 ~ 175 |
| نوع التركيب | Through Hole |
Specifications & Application Scenarios
Specifications: The AC3M0021120D is a 1200V, 82A SiC MOSFET with a 21mΩ on-resistance. Designed for a 15V gate drive, it has a Vgs(th) of 2.5V. Its total gate charge is 158nC. With a 472W power rating and operation up to 175°C, it is built for demanding high-power environments.
Application Scenarios: This MOSFET offers a versatile solution for 1200V applications. It is an excellent choice for power switches in three-level inverters for industrial drives/UPS, the primary side of dual-active-bridge (DAB) converters, and main switching elements in high-power induction heating equipment.
Application Scenarios: This MOSFET offers a versatile solution for 1200V applications. It is an excellent choice for power switches in three-level inverters for industrial drives/UPS, the primary side of dual-active-bridge (DAB) converters, and main switching elements in high-power induction heating equipment.
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