| Model |
AC3M0021120K |
|---|---|
| Description |
SiC MOSFET N-CH 1200V 102A TO-247-4 |
| Technology |
Silicon Carbide |
| FET Type |
N-Channel |
| Package |
TO-247-4 |
| Drain to Source Voltage |
1200V |
| Continuous Drain Current (ID) |
102A |
| Gate Drive Voltage (Vgs) |
15V |
| Vgs (Max) |
-8V, +19V |
| Rds(on) |
21mΩ |
| Vgs(th) |
2.5V |
| Gate Charge (Qg) |
160 nC |
| Input Capacitance (Ciss) |
1620 pF |
| Max Power Dissipation |
472W |
| Operating Temperature (°C) |
-40 ~ 175 |
| Mounting Type |
Through Hole |
Specifications & Application Scenarios
Specifications: The AC3M0021120K is the TO-247-4 Kelvin source version of a 1200V SiC MOSFET, rated for 102A at 21mΩ on-resistance. It has a gate charge of 160nC and a lower input capacitance. It shares the 472W power rating and 175°C maximum junction temperature.
Application Scenarios: The combination of high current, low Rds(on), and optimized switching package makes this device ideal for applications pushing power density and frequency limits, such as phase legs of next-generation servo drives, main switches in high-power Class-D audio amplifiers, and advanced totem-pole PFC stages.
Application Scenarios: The combination of high current, low Rds(on), and optimized switching package makes this device ideal for applications pushing power density and frequency limits, such as phase legs of next-generation servo drives, main switches in high-power Class-D audio amplifiers, and advanced totem-pole PFC stages.
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