| Model | |
|---|---|
| Description |
SiC MOS (Silicon Carbide)AC3M0032120Ki 1200V 69A |
| FET Type |
N-Channel |
| DrainVoltage(Vdss) |
1200V |
| Current |
69A |
| Drive Voltage |
15V |
| Vgs (Max) |
+15V, -4V |
| Rds On |
32mΩ |
| Vgs(th) |
3.6V |
| Gate Charge (Qg) |
118 nC |
| Input Capacitance (Ciss) |
3357 pF |
| Power Dissipation |
341W |
| Operating Temperature (℃) | |
| Mounting Type |
Through Hole |
| Package |
Related products
ADDRESS：
17F, North Industrial Building, No. 3003 Shennan Road, Futian District, Shenzhen, China
TEL：
+86-755-83-666-556
+86-755-83-666-557
+86-755-83-666-558
E-mail：
apsemi@a-semi.com
sales@a-semi.com
design@a-semi.com
©2026 APSEMI CO.,LTD