Specifications: The APV258BE is a high-voltage Silicon Carbide (SiC) PhotoMOS SSR in a DIP-5 package. This 1 Form A (SPST-NO) device is rated for 30mA at 1700V AC/DC. It has a 120惟 on-state resistance, provides 5000Vrms isolation, and switches in 80渭s (on) and 50渭s (off). It operates from -40掳C to 85掳C and is controlled by 1.33-1.5VDC. Application Scenarios: Targeting specialized ultra-high voltage, low-current applications demanding SiC reliability. Ideal for medical diagnostic equipment (e.g., ultrasound), high-voltage probe power switching, industrial insulation testers, electrostatic applications, and scientific research equipment. The DIP-5 package is suitable for designs requiring the thermal and mechanical benefits of through-hole technology in high-voltage circuits.