Specifications: The APY211G1E is the through-hole DIP-4 version of a high-efficiency PhotoMOS SSR. It is a 1 Form A (SPST-NO) device rated for 1.1A at 60V AC/DC. It features a very low 0.27Ω on-state resistance, provides 5000Vrms isolation, and switches with 1500μs (on) and 50μs (off) times. It operates from -40°C to 85℃ with 1.2-1.4VDC control.

Application Scenarios: Designed for the same high-efficiency medium-current switching as the SMD version, but in a through-hole package. Ideal for driving high-current loads in industrial control panels, power supply modules, automotive aftermarket electronics, and educational/prototyping projects where ease of assembly, serviceability, and excellent thermal performance are key considerations.