Modelo

AC2M0045170K

Descrição

SiC MOSFET N-CH 1700V 74A TO-247-4

Technology

Silicon Carbide

FET Type

N-Channel

Embalagem

TO-247-4

Drain to Source Voltage

1700V

Continuous Drain Current (ID)​

74A

Gate Drive Voltage (Vgs)

20V

Vgs (Max)

+25V, -10V

Rds(on)

45mΩ

Vgs(th)

2.7V

Gate Charge (Qg)

188 nC

Input Capacitance (Ciss)

3672 pF

Max Power Dissipation

520W

Operating Temperature (°C)

-40 ~ 150

Tipo de montagem

Furo passante

Specifications & Application Scenarios

Specifications: The AC2M0045170K is the TO-247-4 (Kelvin source) version of the 1700V SiC MOSFET, rated for 74A. It maintains the 45mΩ on-resistance. The fourth pin provides a separate, low-inductance return path for the gate driver, significantly reducing parasitic source inductance. This leads to faster switching, lower gate ringing, and minimized switching losses. Its electrical parameters are otherwise similar to the 3-pin version.

Application Scenarios: The Kelvin source package is indispensable for applications demanding the ultimate in switching speed and efficiency. It is the preferred choice for high-frequency, high-voltage resonant converters (e.g., LLC, phase-shifted full-bridge) used in EV charging stations and advanced server PSUs, and for paralleling devices in very high-current motor drives.

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