ModelAC2M0045170K
说明SiC MOSFET N-CH 1700V 74A TO-247-4
TechnologySilicon Carbide
FET TypeN-Channel
包装TO-247-4
Drain to Source Voltage1700V
Continuous Drain Current (ID)​74A
Gate Drive Voltage (Vgs)20V
Vgs (Max)+25V, -10V
Rds(on)45mΩ
Vgs(th)2.7V
Gate Charge (Qg)188 nC
Input Capacitance (Ciss)3672 pF
Max Power Dissipation520W
Operating Temperature (°C)-40 ~ 150
安装类型Through Hole

Specifications & Application Scenarios

Specifications: The AC2M0045170K is the TO-247-4 (Kelvin source) version of the 1700V SiC MOSFET, rated for 74A. It maintains the 45mΩ on-resistance. The fourth pin provides a separate, low-inductance return path for the gate driver, significantly reducing parasitic source inductance. This leads to faster switching, lower gate ringing, and minimized switching losses. Its electrical parameters are otherwise similar to the 3-pin version.

Application Scenarios: The Kelvin source package is indispensable for applications demanding the ultimate in switching speed and efficiency. It is the preferred choice for high-frequency, high-voltage resonant converters (e.g., LLC, phase-shifted full-bridge) used in EV charging stations and advanced server PSUs, and for paralleling devices in very high-current motor drives.

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