Model

AC2M0045170D

说明

SiC MOSFET N-CH 1700V 78A TO-247-3

Technology

Silicon Carbide

FET Type

N-Channel

包装

TO-247-3

Drain to Source Voltage

1700V

Continuous Drain Current (ID)​

78A

Gate Drive Voltage (Vgs)

20V

Vgs (Max)

+25V, -10V

Rds(on)

45mΩ

Vgs(th)

2.6V

Gate Charge (Qg)

186 nC

Input Capacitance (Ciss)

3617 pF

Max Power Dissipation

528W

Operating Temperature (°C)

-40 ~ 150

安装类型

Through Hole

Specifications & Application Scenarios

Specifications: The AC2M0045170D is an ultra-high-voltage SiC MOSFET rated for 1700V and 78A. It achieves a low on-resistance of 45mΩ at this voltage class. Utilizing a 20V gate drive (+25V/-10V max), it has a Vgs(th) of 2.6V. The device exhibits a gate charge of 186nC and a high input capacitance. It boasts a substantial 528W power dissipation capability and operates from -40°C to 150°C.

Application Scenarios: Designed for the most demanding high-voltage infrastructures, this MOSFET is critical for 1500V photovoltaic string and central inverters in solar farms. It is also essential for traction inverters in electric buses and trains, solid-state transformers (SST) in smart grids, and high-power X-ray generator power supplies.

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