Package:
Reverse Voltage (Vrrm):
Continuous Forward Current (IF)​:
Max Power Dissipation:

Gói

Continuous Forward Current (IF)​

Capacitance Charge (QC)

Operating Temperature (°C)

AC4D05120A

SiC (Silicon Carbide) Schottky
TO-220-2
1200 V
5 A
1.4 V
100 W
27 nC
-55°C ~ 175°C

AC4D08120A

SiC (Silicon Carbide) Schottky
TO-220-2
1200 V
8 A
1.5 V
136.5 W
37 nC
-55°C ~ 175°C

AC4D10120A

SiC (Silicon Carbide) Schottky
TO-220-2
1200 V
10 A
1.5 V
166.5 W
52 nC
-55°C ~ 175°C

AC4D10120D

SiC (Silicon Carbide) Schottky
TO-247-3
1200 V
10 A
1.4 V
187 W
27 nC
-55°C ~ 175°C

AC4D10120H

SiC (Silicon Carbide) Schottky
TO-247-2
1200 V
10 A
1.5 V
153 W
52 nC
-55°C ~ 175°C

AC4D12120A

SiC (Silicon Carbide) Schottky
TO-220-2
1200 V
12 A
1.35 V
166.5 W
52 nC
-55°C ~ 175°C

AC4D15120A

SiC (Silicon Carbide) Schottky
TO-220-2
1200 V
15 A
1.6 V
214 W
77.5 nC
-55°C ~ 175°C

AC4D15120D

SiC (Silicon Carbide) Schottky
TO-247-3
1200 V
15 A
1.5 V
270 W
37 nC
-55°C ~ 175°C

AC4D15120H

SiC (Silicon Carbide) Schottky
TO-247-2
1200 V
15 A
1.5 V
174.5 W
77.5 nC
-55°C ~ 175°C

AC4D20120A

SiC (Silicon Carbide) Schottky
TO-220-2
1200 V
20 A
1.5 V
250 W
99 nC
-55°C ~ 175°C

AC4D20120D

SiC (Silicon Carbide) Schottky
TO-247-3
1200 V
20 A
1.5 V
352 W
52 nC
-55°C ~ 175°C

AC4D20120H

SiC (Silicon Carbide) Schottky
TO-247-2
1200 V
20 A
1.5 V
246 W
99 nC
-55°C ~ 175°C

ĐỊA CHỈ:

Tầng 17, Tòa nhà Công nghiệp Bắc, Số 3003 Đường Shennan, Quận Futian, Thâm Quyến, Trung Quốc

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