| Model | |
|---|---|
| Description | |
| Series | |
| Operating Temperature (℃) | |
| Model | |
| Description |
SiC MOS (Silicon Carbide)AC3M0015065D 650V 120A |
| FET Type |
N-Channel |
| DrainVoltage(Vdss) |
650V |
| Current |
120A |
| Drive Voltage |
15V |
| Vgs (Max) |
+15V, -4V |
| Rds On |
15mΩ |
| Vgs(th) |
3.6V |
| Gate Charge (Qg) |
188 nC |
| Input Capacitance (Ciss) |
5011 pF |
| Power Dissipation |
416W |
| Operating Temperature (℃) | |
| Mounting Type |
Through Hole |
| Package |
TO-247-3 |
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