| Model | AC3M0032120K |
|---|---|
| 说明 | SiC MOSFET N-CH 1200V 64A TO-247-4 |
| Technology | Silicon Carbide |
| FET Type | N-Channel |
| 包装 | TO-247-4 |
| Drain to Source Voltage | 1200V |
| Continuous Drain Current (ID) | 64A |
| Gate Drive Voltage (Vgs) | 15V |
| Vgs (Max) | +15V, -4V |
| Rds(on) | 32mΩ |
| Vgs(th) | 2.5V |
| Gate Charge (Qg) | 116nC |
| Input Capacitance (Ciss) | 3180 pF |
| Max Power Dissipation | 288W |
| Operating Temperature (°C) | -40 ~ 175 |
| 安装类型 | Through Hole |
Specifications & Application Scenarios
Specifications: The AC3M0032120K is the TO-247-4 Kelvin source version, utilizing the same +15V/-4V gate drive. It shares the 32mΩ on-resistance and 288W rating. The Kelvin source ensures crisp switching transitions.
Application Scenarios: The enhanced switching performance makes this variant ideal for high-frequency resonant converter topologies, fast-switching applications like pulsed power modulators, and advanced digital control power supplies.
Application Scenarios: The enhanced switching performance makes this variant ideal for high-frequency resonant converter topologies, fast-switching applications like pulsed power modulators, and advanced digital control power supplies.
相关产品
地 址：
中国深圳市福田区深南大道3003号北方工业大厦17层
电话：
+86-755-83-666-556
+86-755-83-666-557
+86-755-83-666-558
电子邮件：
apsemi@a-semi.com
sales@a-semi.com
design@a-semi.com
©2026 APSEMI co.,ltd