| Model | AC3M0040120K |
|---|---|
| 说明 | SiC MOSFET N-CH 1200V 67A TO-247-4 |
| Technology | Silicon Carbide |
| FET Type | N-Channel |
| 包装 | TO-247-4 |
| Drain to Source Voltage | 1200V |
| Continuous Drain Current (ID) | 67A |
| Gate Drive Voltage (Vgs) | 15V |
| Vgs (Max) | -8V, +19V |
| Rds(on) | 40mΩ |
| Vgs(th) | 2.7V |
| Gate Charge (Qg) | 95 nC |
| Input Capacitance (Ciss) | 2820 pF |
| Max Power Dissipation | 330W |
| Operating Temperature (°C) | -40 ~ 175 |
| 安装类型 | Through Hole |
Specifications & Application Scenarios
Specifications: The AC3M0040120K is the Kelvin source TO-247-4 packaged version, maintaining identical electrical specs. The separate source pin optimizes high-frequency switching characteristics.
Application Scenarios: This package is chosen for highest switching speed and lowest loss. It is suitable for high-frequency DC-DC converters in aerospace, fast protection switches in battery test equipment, and advanced digital power amplifiers.
Application Scenarios: This package is chosen for highest switching speed and lowest loss. It is suitable for high-frequency DC-DC converters in aerospace, fast protection switches in battery test equipment, and advanced digital power amplifiers.
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