| Model | |
|---|---|
| Description |
SIC, SCHOTTKY DIODE, 60A, 1200V, |
| Series |
SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr)(Max) |
1200 V |
| Reverse Leakage Current |
30 µA |
| Current-Average Rectified (Io) |
170A |
| Voltage-Forward (Vf) (Max) @If |
1.62 V |
| Capacitance |
4750pF |
| Mounting Type |
Through Hole |
| Package |
TO-247-3 |
相关产品
地 址：
中国深圳市福田区深南大道3003号北工业大厦17层
电话：
+86-755-83-666-556
+86-755-83-666-557
+86-755-83-666-558
电子邮件：
apsemi@a-semi.com
sales@a-semi.com
design@a-semi.com
©2026 APSEMI co.,ltd