Specifications: The APV188G1E is a high-voltage, medium-current Silicon Carbide (SiC) PhotoMOS SSR in a DIP-5 package. This 1 Form A (SPST-NO) device is rated for 450mA at 1800V AC/DC. It features a relatively low 1.8惟 on-state resistance (for its voltage), provides 5000Vrms isolation, and switches with 750渭s (on) and 50渭s (off) times. It operates from -40掳C to 85掳C with 1.33-1.5VDC control. Application Scenarios: Targeting demanding applications that combine high voltage with moderate current, leveraging SiC technology. Ideal for medical X-ray generators, industrial RF amplifiers, high-voltage pulse generators, particle accelerator subsystems, and advanced power conversion systems, where high breakdown voltage, efficiency, and reliability are paramount in a through-hole package.