Model
Description
Series
Operating Temperature (℃)
Package
Model

Description

SiC MOS (Silicon Carbide)AC3M0040120K 1200V 66A

FET Type

N-Channel

DrainVoltage(Vdss)

1200V

Current

66A

Drive Voltage

15V

Vgs (Max)

+15V, -4V

Rds On

40mΩ

Vgs(th)

3.6V

Gate Charge (Qg)

99 nC

Input Capacitance (Ciss)

2900 pF

Power Dissipation

326W

Operating Temperature (℃)

Mounting Type

Through Hole

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